Study of mm-scale spatial variations in strain of a compositionally step-graded InxGa12xAs/GaAs(001) heterostructure
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چکیده
The relaxation of strain in compositionally step-graded InxGa12xAs layers grown on GaAs~001! has been examined with cathodoluminescence ~CL! wavelength and linearly polarized imaging approaches. A polarization anisotropy in CL is found, and this correlates with spectral shifts in the peak positions of excitonic luminescence. Varying asymmetries in misfit dislocation densities from transmission electron microscopy are found to be consistent with the mm-scale spatial variations in strain that is deduced from the CL. © 1995 American Institute of Physics.
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تاریخ انتشار 1996